DOI
10.1109/CICT48419.2019.9066255
Year of Publication
2019
Type
Conference Proceedings
Published in
3rd IEEE Conference on Information and Communication Technology
Publication Title
Impact of Channel Doping Fluctuation and Metal Gate Work Function Variation in FD-SOI MOSFET for 5nm BOX Thickness
Status
International
First Author
Avaneesh K. Dubey, Pratosh K Pal, Vikrant Varshney, Ankur Kumar, and R. K. Nagaria
Page Numbers
1-6
Status of Paper
Published
Related Department
Electronics & Communication Engineering Department
Nature
SCOPUS
Publisher
IEEE
Refereed/Peer Reviewed
Peer Reviewed
Month of Publication
Dec