Link
https://link.springer.com/article/10.1007%2Fs12648-019-01535-2
Year of Publication
2019
Other Authors
S Chander & S Jit
Type
Journals
Published in
INJP
Publication Title
Analytical drain current model of stacked oxide SiO2/HfO2 cylindrical gate tunnel FETs with oxide interface charge
Status
International
First Author
Prince Kumar Singh
Second Author
Kamalaksha Baral
Third Author
Sanjay Kumar
Impact Factor
1.49
Status of Paper
Published
Related Department
Electronics & Communication Engineering Department
Nature
SCI
Publisher
Springer Journals Publication
Refereed/Peer Reviewed
NA
Month of Publication
Jun