Subthreshold Swing Modeling of Gaussian Doped Double Gate MOSFETs and its Validation Based on TCAD Simulation | Institute of Engineering & Technology, Lucknow

Link

Year of Publication

2020

Other Authors

Ashish Kumar Singh, Manas Ranjan Tripathy, Rishibrind Kumar Upadhyay and Satyabrata Jit

Type

Conference Proceedings

Published in

Publication Title

Subthreshold Swing Modeling of Gaussian Doped Double-Gate MOSFETs and its Validation Based on TCAD Simulation

Status

International

First Author

Prince Kumar Singh

Second Author

Kamalaksha Baral

Third Author

Sanjay Kumar

Status of Paper

Published

Nature

SCI

Publisher

Refereed/Peer Reviewed

Month of Publication

Jul

Council/Bodies

Institute of Engineering & Technology,
Sitapur Road,Lucknow
Uttar Pradesh
India
Pin Code : 226021