A comprehensive review analysis on advances of evacuated tube solar collector using nanofluids and PCM Read more about A comprehensive review analysis on advances of evacuated tube solar collector using nanofluids and PCM
Development of a high temperature facility for study of aerosol emission behavior of combustible materials Read more about Development of a high temperature facility for study of aerosol emission behavior of combustible materials
Investigation of thermo-mechanical properties of surface treated SiO2/epoxy nanocomposite Read more about Investigation of thermo-mechanical properties of surface treated SiO2/epoxy nanocomposite
Synthesis and tunable microwave absorption characteristics of flower-like Ni/SiC composites Read more about Synthesis and tunable microwave absorption characteristics of flower-like Ni/SiC composites
Improved microwave absorption behavioral response of Ni/SiC and Ni/SiC/Graphene composites: A comparative insight Read more about Improved microwave absorption behavioral response of Ni/SiC and Ni/SiC/Graphene composites: A comparative insight
Thermo-mechanical behavior of TiO2 dispersed epoxy composites Read more about Thermo-mechanical behavior of TiO2 dispersed epoxy composites
Effect of heat treatment on morphology and microwave absorption behavior of milled SiC Read more about Effect of heat treatment on morphology and microwave absorption behavior of milled SiC
Double layer microwave absorber based on Cu dispersed SiC composites Read more about Double layer microwave absorber based on Cu dispersed SiC composites
Influence of Zn dispersion in SiC on electromagnetic wave absorption characteristics Read more about Influence of Zn dispersion in SiC on electromagnetic wave absorption characteristics
Ultra-Wideband Quadrature LC-VCO using Capacitor-Bank and Backgate Topology with On-Chip Spirally Stacked Inductor in 0.13 µm RF-CMOS Process Covering S-C Bands Read more about Ultra-Wideband Quadrature LC-VCO using Capacitor-Bank and Backgate Topology with On-Chip Spirally Stacked Inductor in 0.13 µm RF-CMOS Process Covering S-C Bands