CHANDRA KISHORE

Sense amplifier plays an important role in semiconductor memories which used to sense the stored data in memory cell. Two most important parameters like sensing delay and voltage are used in sense amplifier. Sense amplifier reduces the overall sensing delay and voltage. Voltage mode sense amplifier detects the voltage difference between bit-line and bit-line bar but when increases the memory size the bit-line and bit-line capacitance also increases. In this paper all circuit design analysis using Tanner 14.1 version simulation tool at 1.5v/45nm CMOS Technology. This result shows lower delay and power dissipation when compared with TGVMSA and VMSA. The TGVMSA has higher cell area but lower power dissipation and delay.